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Freescale Semiconductor Technical Data
Document Number: MHVIC2114NR2 Rev. 5, 5/2006
RF LDMOS Wideband Integrated Power Amplifier
The MHVIC2114NR2 wideband integrated circuit is designed for base station applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip matching design makes it usable from 1600 to 2600 MHz. The linearity performances cover all modulation formats for cellular applications: CDMA and W - CDMA. The device is in a PFP - 16 flat pack package that provides excellent thermal performance through a solderable backside contact. Final Application * Typical Two - Tone Performance: VDD = 27 Volts, IDQ1 = 95 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 15 Watts PEP, Full Frequency Band Power Gain -- 32 dB IMD -- - 30 dBc Driver Application * Typical Single - Channel W - CDMA Performance: VDD = 27 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110 - 2170 MHz, 3GPP Test Model 1, Measured in 3.84 MHz BW @ 5 MHz Offset, 64 DTCH, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 32 dB ACPR -- - 58 dBc * P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz * Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MHVIC2114NR2
2100 MHz, 27 V, 23 dBm SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
16 1
CASE 978 - 03 PFP - 16
N.C. VGS3 VGS2 VGS1 VGS3 Quiescent Current Temperature Compensation VGS2 VGS1 RFin RFin IC VDS3/RFout RFin VDS1 VDS2
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C.
VDS1 VDS2
3 Stages IC (Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Block Diagram
Figure 2. Pin Connections
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHVIC2114NR2 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +15 - 65 to +150 150 5 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Driver Application (Pout = +0.2 W CW) Stage 1, 27 Vdc, IDQ1 = 96 mA Stage 2, 27 Vdc, IDQ2 = 204 mA Stage 3, 27 Vdc, IDQ3 = 111 mA Symbol RJC 11.5 7.52 5.52 Value Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 0 (Minimum) A (Minimum) II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm, 2110- 2170 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gain Flatness Input Return Loss Adjacent Channel Power Ratio Group Delay Phase Linearity Gps GF IRL ACPR Delay -- 29 -- -- -- -- -- 32 0.3 - 13 - 60 1.7 0.2 36 0.5 - 10 - 57 -- -- dB dB dB dBc ns
MHVIC2114NR2 2 RF Device Data Freescale Semiconductor
1 VGS3 R3 VGS2 R2 VGS1 R1 RF INPUT
16 VDS3
+
C1 C2
2
15 C17 C18
+
C19
+
C20
+
C5 C3
3
14
Z4
4 13 C15 RF OUTPUT
+
C14 C4 5 12
Z2
C9 6 11 C16
Z5
Z3
Z1
C22
VDS1
+
C21 VDS2
+
C8 C7 C6
7
Quiescent Current Temperature Compensation
10
+
C13
+
C12 C11 C10
8
9
Z1 Z2 Z3 Z4 Z5 PCB
0.323 x .055 50 Microstrip 0.196 x .176 Microstrip 0.286 x .055 Microstrip 0.150 x .018 Microstrip 0.363 x .055 Microstrip Arlon, 0.021, r = 2.55
Figure 3. MHVIC2114NR2 Test Circuit Schematic Table 6. MHVIC2114NR2 Test Circuit Component Designations and Values
Part C1, C5, C8, C12, C14, C19 C2, C3, C4, C7, C11, C18 C6, C10, C17 C9 C15, C16 C22 C13, C20, C21 R1, R2, R3 Description 1 F Tantalum Chip Capacitors 0.01 F Chip Capacitors 6.8 pF Chip Capacitors (ACCU - P) 1.5 pF Chip Capacitor (ACCU - P) 2.2 pF Chip Capacitors (ACCU - P) 1.0 pF Chip Capacitor (ACCU - P) 330 F Electrolytic Capacitors 1 kW Chip Resistors (0805) Part Number TAJA105K035R 0805C103K5RACTR AVX08051J6R8BBT AVX08051J1R5BBT AVX08051J2R2BBT AVX08051J1R0BBT MCR35V337M10X16 P1.00KCCT- ND Manufacturer Kemet Vishay AVX AVX AVX AVX Multicomp Panasonic
MHVIC2114NR2 RF Device Data Freescale Semiconductor 3
VGS1
R1 C14
VGS2
R2
R3
VGS3
C5 C3 C4
C2
C1
C15 C9 C16 MHVIC2114R2 Rev 1 C22
C6 C10 C17 C11 C12 C7 C8 VDD1 VDD2
C18 C19
VDD3
C21
C13
C20
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MHVIC2114NR2 Test Circuit Component Layout
MHVIC2114NR2 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
40 30 20 S21 (dB) 10 0 -10 -20 VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA f, FEQUENCY (MHz) S11 S21 0 -5 -10 DELAY, (nSEC) -15 -20 -25 -30 S11 (dB) 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 2100 -30 -35 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -30_C VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150 2160 2170 2180 25_C TC = 85_C
f, FREQUENCY (MHz)
Figure 5. Broadband Frequency Response
Figure 6. Delay versus Frequency
40 IRL, INPUT RETURN LOSS (dB)
-18 -17 -16 -15 25_C -14 -13 -12 -11 2160 2170 2180 -30_C TC = 85_C VDD = 27 Vdc, Pout = 23 dBm CW IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
G ps , POWER GAIN (dB)
36 TC = -30_C 32 25_C
28
85_C
24 VDD = 27 Vdc, Pout = 23 dBm CW 20 2100 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 2110 2120 2130 2140 2150
-10 2100
2110
2120
2130
2140
2150
2160
2170
2180
f, FREQUENCY (MHz)
f, FREQUENCY, (MHz)
Figure 7. Power Gain versus Frequency
Figure 8. Input Return Loss versus Frequency
40 38 36 G ps , POWER GAIN (dB) 34 32 30 28 26 24 22 20 15 VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 17.5 20 22.5 25 27.5 30 32.5 35 37.5 40 85_C S21 PHASE(_) 25_C TC = -30_C
-10
-20 TC = -30_C -30 25_C 40
-50 -60 15
85_C VDD = 27 Vdc, f = 2140 MHz IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 20 25 30 35 40 45
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 9. Power Gain versus Output Power
Figure 10. S21 Phase versus Output Power
MHVIC2114NR2 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 2110 MHz -50 2170 MHz -55 -60 2140 MHz VDD = 27 Vdc 3GPP Test Model 1 64 DPCH -20 -30 -40 -50 -60 -70 -80 -90 2000 5th Order 3rd Order VDD = 27 Vdc Pout = 23 dBm Two-Tone Avg. Tone Spacing = 100 kHz
IDQ3 = 100 mA 111 mA 122 mA 122 mA 100 mA 111 mA
-65 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Pout, OUTPUT POWER (dBm)
2050
2100
2150
2200
2250
2300
f, FREQUENCY (MHz)
Figure 11. W - CDMA ACPR versus Output Power
Figure 12. Two - Tone Intermodulation Distortion Products versus Frequency
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 7th Order -60 -70 -80 0 VDD = 27 Vdc, f = 2140 MHz Pout = 7.5 W, Two-Tone Avg. IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA 10 20 30 40 50 60 70 80 90 100 110 5th Order 3rd Order VBIAS, FIXTURE BIAS VOLTAGE (V)
7 6.75 6.5 6.25 6 5.75 5.5 5.25 5 4.75 4.5 4.25 4 3.75 3.5 3.25 3 -40
VBIAS1 VBIAS2 VDD = 27 Vdc, f = 2140 MHz R1 = R2 = R3 = 1000 Ohms
VBIAS3
-20
0
20
40
60
80
100
TONE SPACING (MHz)
T, TEMPERATURE (C)
Figure 13. Two - Tone Intermodulation Distortion Products versus Tone Spacing
Figure 14. Fixture Bias versus Temperature
4.5 4.4 VGS, IC GATE BIAS VOLTAGE (V) 4.3 4.2 4.1 4 3.9 VGS3 3.8 3.7 3.6 IGS3 3.5 -40 -30 -20 -10 0 10 20 30 40 VDD = 27 Vdc, f = 2140 MHz R1 = R2 = R3 = 1000 Ohms IGS1 & IGS2
2 1.8 IGS, GATE BIAS CURRENT (A) 1.6 1.4 1.2 VGS1 & VGS2 1 0.8 0.6 0.4 0.2 0 50 60 70 80 90 100 T, TEMPERATURE (C)
Figure 15. Gate Bias versus Temperature
MHVIC2114NR2 6 RF Device Data Freescale Semiconductor
f = 2170 MHz Zload f = 2110 MHz
f = 2110 MHz Zin f = 2170 MHz
Zo = 50
VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm f MHz 2110 2140 2170 Zin Zin 57.9 - j12.1 50.6 - j18.9 42.3 - j21.1 Zload 1.1 + j2.7 1.1 + j3.4 1.2 + j3.7
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 16. Series Equivalent Input and Load Impedance
MHVIC2114NR2 RF Device Data Freescale Semiconductor 7
NOTES
MHVIC2114NR2 8 RF Device Data Freescale Semiconductor
NOTES
MHVIC2114NR2 RF Device Data Freescale Semiconductor 9
NOTES
MHVIC2114NR2 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _ A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb Y A A2
M
b1 c
C
DATUM PLANE SEATING PLANE
H
SECT W - W
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978 - 03 ISSUE C PFP - 16
RF Device Data Freescale Semiconductor
CCC EE CCC EE
b aaa
M
c1
CA
S
DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc
MHVIC2114NR2 11
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RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp.
MHVIC2114NR2
Rev. 12 5, 5/2006 Document Number: MHVIC2114NR2
RF Device Data Freescale Semiconductor

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